OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction
- OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction
- 최준환; 윤호규; 김재경
- Organic thin-film transistors; OTFTs; Organic？norganic hybrid materials; Hybrid gate insulators; Sol？el materials; Pentacene organic semiconductor
- Issue Date
- Organic electronics
- VOL 11, 1145-1148
- The work presented here focuses on the preparation and characterization of gate dielectrics
in organic thin-film transistors (OTFTs), fabricated by the sol–gel process. Hybrid dielectrics
were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone
by sol–gel process and patterned by UV cross-linking below 120 ℃. Leakage currents
of dielectric layers remained below 10-9 A under operating voltage and dielectric constants
were measured to be ~6.5 at 10 kHz. The field effect mobility and on–off ratio were
~0.86 ㎠/V s and ~104, respectively. These results demonstrate that sol–gel hybrid systems
are suitable for gate dielectrics in OTFTs.
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