OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction

Title
OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction
Authors
최준환윤호규김재경
Keywords
Organic thin-film transistors; OTFTs; Organic?norganic hybrid materials; Hybrid gate insulators; Sol?el materials; Pentacene organic semiconductor
Issue Date
2010-06
Publisher
Organic electronics
Citation
VOL 11, 1145-1148
Abstract
The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol–gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol–gel process and patterned by UV cross-linking below 120 ℃. Leakage currents of dielectric layers remained below 10-9 A under operating voltage and dielectric constants were measured to be ~6.5 at 10 kHz. The field effect mobility and on–off ratio were ~0.86 ㎠/V s and ~104, respectively. These results demonstrate that sol–gel hybrid systems are suitable for gate dielectrics in OTFTs.
URI
http://pubs.kist.re.kr/handle/201004/37419
ISSN
1566-1199
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KIST Publication > Article
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