Electrical bistability and spin valve effect in a ferromagnet/organic semiconductor/ferromagnet heterojunction
- Electrical bistability and spin valve effect in a ferromagnet/organic semiconductor/ferromagnet heterojunction
- Bin Li; Jung-Woo Yoo; Chi-Yueh Kao; 장호원; Chang-Beom Eom; Arthur J. Epstein
- Bistable device; Spin valve; Organic semiconductor; Magnetoresistance
- Issue Date
- Organic electronics
- VOL 11, NO 6, 1149-1153
- We report a study of the electrical bistability and bias-controlled spin valve effect in an
organic device using rubrene (C42H28) as an organic semiconductor channel. The halfmetallic
La0.7Sr0.3MnO3 (LSMO) and Fe are used as the two ferromagnetic electrodes. The
device displays reproducible switching between a low-impedance (ON) state and a highimpedance
(OFF) state by applying different polarities of high biases. In the ON state, the
device shows a spin valve effect with magnetoresistance values up to 3.75%. The observed
spin valve effect disappears when the device recovers to the initial OFF state.
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