Electrical bistability and spin valve effect in a ferromagnet/organic semiconductor/ferromagnet heterojunction

Title
Electrical bistability and spin valve effect in a ferromagnet/organic semiconductor/ferromagnet heterojunction
Authors
Bin LiJung-Woo YooChi-Yueh Kao장호원Chang-Beom EomArthur J. Epstein
Keywords
Bistable device; Spin valve; Organic semiconductor; Magnetoresistance
Issue Date
2010-06
Publisher
Organic electronics
Citation
VOL 11, NO 6, 1149-1153
Abstract
We report a study of the electrical bistability and bias-controlled spin valve effect in an organic device using rubrene (C42H28) as an organic semiconductor channel. The halfmetallic La0.7Sr0.3MnO3 (LSMO) and Fe are used as the two ferromagnetic electrodes. The device displays reproducible switching between a low-impedance (ON) state and a highimpedance (OFF) state by applying different polarities of high biases. In the ON state, the device shows a spin valve effect with magnetoresistance values up to 3.75%. The observed spin valve effect disappears when the device recovers to the initial OFF state.
URI
http://pubs.kist.re.kr/handle/201004/37422
ISSN
1566-1199
Appears in Collections:
KIST Publication > Article
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