Optical Properties of Ga-doped ZnO Nanowires depending on Thermal Quenching

Optical Properties of Ga-doped ZnO Nanowires depending on Thermal Quenching
Issue Date
2010 21st IC ME&D
Advances in oxide semiconductor materials have been attracting much attention due to their excellent electrical and optical characteristics [1]. Among those oxide materials, zinc oxide (ZnO) has received broad attention for the potential applications in short wavelength optoelectronic device, owing to its large exciton finding energy of 60 meV and wide direct band gap of 3.37 eV at room temperature [2]. For enhancement performance of ZnO-based devices, n- and p-type doping technologies are necessary. However, few studies on the properties of Ga-doped ZnO nanostructures have been reported so far. So, thermal quenching dependent optical properties of Ga-doped ZnO nanowires grown by how-walled pulsed laser deposition (HW-PLD) unique method were investigated. The temperature dependent photoluminescence (PL) of the pure ZnO provides the reference for the PL analysis of the doped ZnO NWs. PL of Ga-doped ZnO nanowires is shown, in which dominant peak of the exciton bound to neutral donor (D0X) is found at 3.354 eV ensuring that the successful Ga-doping into the ZnO matrix. As temperature decreases, the peak shifts to low wavelength (blue shift) because of the band gap broadening effect at low temperature [3]. Other peaks of Ga-doped ZnO nanowire located at 3.304 eV and 3.234 eV also emerge as the temperature decreases.
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