Synthesis of ZnxCd1-xSe (0 ≤ x ≤ 1) alloyed nanowires for variable-wavelength photodetectors
- Synthesis of ZnxCd1-xSe (0 ≤ x ≤ 1) alloyed nanowires for variable-wavelength photodetectors
- 윤여준; 박경수; 허정훈; 박재관; 남산; 최경진
- Zinc selenide; Cadmium selenide; photoresponse; zinc blende; wurtzite
- Issue Date
- Journal of materials chemistry
- VOL 20, NO 12, 2386-2390
- Variable-wavelength photodetectors are fabricated by a selective growth of ZnxCd1-xSe alloy nanowires
on patterned Au catalysts thus forming nanowire air-bridges between two Pt pillar electrodes. From the
composition-dependent linear changes of bandgap energies and lattice parameters, ZnxCd1-xSe
nanowires are found to be perfectly alloyed in the entire range of Zn composition without any phase
separation and have a structural transition from zinc blende to wurtzite at 0.31 < x < 0.72. The spectral
responses of ZnxCd1-xSe detectors show that the cut-off wavelength can be continuously tuned within
the visible spectrum of light extending from red to blue. In on-off switching operations, all of the
detectors can be reversibly switched between the low and the high conductivity state but the CdSe
detector has slower response and recovery behaviors than ZnSe and Zn0.72Cd0.28Se ones, which is
explained by adsorption and photodesorption of O2 on the surface of CdSe nanowires.
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