Growth Temperature Effects of In0.5Al0.5As Buffer Layer on the Optical Properties of In0.5Ga0.5As/In0.5Al0.5As Multiple Quantum Wells Grown on GaAs

Title
Growth Temperature Effects of In0.5Al0.5As Buffer Layer on the Optical Properties of In0.5Ga0.5As/In0.5Al0.5As Multiple Quantum Wells Grown on GaAs
Authors
김희연오현지안상우류미이임주영신상훈김수연송진동
Keywords
PL; TRPL; MBE; InAlAs; InGaAs/InAlAs MQW; Photoluminescence; Time-resolved photoluminescence; Metamorphic; Molecular beam epitaxy
Issue Date
2010-05
Publisher
한국진공학회지; Journal of the Korean Vacuum Society
Citation
VOL 19, NO 3, 211-216
Abstract
The luminescence properties of In0.5Ga0.5As/In0.5Al0.5As multiple quantum wells (MQWs) grown on In0.5Al0.5As buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A 1-μm thick In0.5Al0.5As buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320ㄹ oC to 580oC. The MQWs consist of three In0.5Ga0.5As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick In0.5Al0.5As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range (320-480oC) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range (320-580oC), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of 480oC, while the MQWs with buffer layer grown at higher temperature from 530oC to 580oC showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.
URI
http://pubs.kist.re.kr/handle/201004/37481
ISSN
1225-8822
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