Selective Incorporation of Colloidal Nanocrystals in Nanopatterned SiO2 Layer for Nanocrystal Memory Device

Title
Selective Incorporation of Colloidal Nanocrystals in Nanopatterned SiO2 Layer for Nanocrystal Memory Device
Authors
서일이도중Quanli Hu권창우임기필이승현김용상이현호류두열김기범윤태식
Keywords
2E21551
Issue Date
2010-03
Publisher
Electrochemical and solid-state letters
Citation
VOL 13, NO 3, K19-K21
Abstract
CdSe colloidal nanocrystals with a size of ~5 nm were selectively incorporated in SiO2 nanopatterns formed by a self-assembled diblock copolymer patterning through a simple dip-coating process. The selective incorporation was achieved by capillary force, which drives the nanocrystals into the patterns during solvent evaporation in dip-coating. The capacitor structures of an Al-gate/ atomic layer deposition–Al2O3 (27 nm)/CdSe (5 nm)/patterned SiO2 (25 nm)/p-Si substrate were fabricated to characterize the charging/discharging behavior for a memory device. The flatband voltage shift was observed by a charge transport between the gate and the nanocrystals. It demonstrates the colloidal nanocrystal application to a memory device through selective incorporation in regularly ordered nanopatterns by a simple dip-coating process.
URI
http://pubs.kist.re.kr/handle/201004/37535
ISSN
1099-0062
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KIST Publication > Article
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