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dc.contributor.authorYoon Shon-
dc.contributor.authorSejoon Lee-
dc.contributor.authorTae Won Kang-
dc.contributor.authorYoungmin Lee-
dc.contributor.authorSeung-Woong Lee-
dc.contributor.author송진동-
dc.contributor.author김형준-
dc.contributor.authorJeong Ju Lee-
dc.contributor.authorIm Taek Yoon-
dc.date.accessioned2015-12-02T15:27:37Z-
dc.date.available2015-12-02T15:27:37Z-
dc.date.issued201007-
dc.identifier.citationVOL 312, NO 14, 2069-2072-
dc.identifier.issn0022-0248-
dc.identifier.other32500-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/37592-
dc.description.abstractThe p-type InMnP:Be epilayers, which were prepared by thermal diffusion of Mn through in-situ deposition of Mn layer using molecular beam epitaxy (MBE) onto MBE-grown InP:Be epilayers and subsequent in-situ annealing at 300–350 °C, were investigated. InMnP:Be epilayers prepared by the above sequence clearly showed the Mn-related emission band at 1.1–1.2 eV, which indicates the effective incorporation of Mn2+ ions into the host layer InP:Be. The samples demonstrated very large ferromagnetic hysteresis loops with enhanced coercivity, and the ferromagnetic-to-paramagnetic transition of the samples was observed to occur at ~85 K. These results suggest that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be effectively formed by the above-mentioned sequential in-situ processes.-
dc.publisherJournal of crystal growth-
dc.subjectDiffusion-
dc.subjectMolecular beam epitaxy-
dc.subjectManganites-
dc.subjectMagnetic materials-
dc.subjectSemiconducting indium phosphide-
dc.titleEnlarged ferromagnetic hysteresis in InMnP:Be epilayers formed by thermal diffusion using MBE-grown Mn/InP:Be bilayers-
dc.typeArticle-
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