Titanium-Substituted Bi1.5Zn1.0Nb1.5O7 for High-Density and Low-Temperature-Coefficient-of-Capacitance MIM Capacitor by Low-Temperature Process (300 ℃)

Title
Titanium-Substituted Bi1.5Zn1.0Nb1.5O7 for High-Density and Low-Temperature-Coefficient-of-Capacitance MIM Capacitor by Low-Temperature Process (300 ℃)
Authors
조광환강민규강종윤윤석진이영백
Keywords
Capacitance density; metal-insulator-metal(MIM) capacitor; temeprature coefficient of capacitance (TCC); Ti-substitued Bi1.5Zn1.0Nb1.5O7
Issue Date
2010-04
Publisher
IEEE Electron Device Letters
Citation
VOL 31, NO 5, 473-475
Abstract
A high-density metal–insulator–metal (MIM) capacitor at 300 ℃ with a titanium-substituted Bi1.5ZnNb1.5O7 (BZN) dielectric prepared by physical vapor deposition is presented for the first time. Improvements have been achieved in terms of both capacitance density and temperature coefficient of capacitance (TCC) for MIM capacitors. A 67-nm-thick (Bi1.5Zn0.5)(Zn0.4Nb1.3Ti0.3O7) film has exhibited a high capacitance density of 14.8 fF/㎠ at 100 kHz. The leakage current density is low, which is approximately 7.69 nA/㎠ at 1 V. The values of linear voltage and TCC are approximately 156 ppm/V2 and 98 ppm/℃ at 100 kHz, respectively. All these make the Ti-substituted BZN capacitor very suitable for use in silicon RF and mixed-signal IC applications.
URI
http://pubs.kist.re.kr/handle/201004/37626
ISSN
0741-3106
Appears in Collections:
KIST Publication > Article
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