Nanoscale rectification at the LaAlO3/SrTiO3 interface

Title
Nanoscale rectification at the LaAlO3/SrTiO3 interface
Authors
Daniela F. BogorinChung Wung Bark장호원Cheng CenChad M. FolkmanChang-Beom EomJeremy Levy
Keywords
LaAlO3/SrTiO3; Nanoscale rectification; Metal-insulator transition; Two-dimensional electron; Conducting AFM; 2E21722
Issue Date
2010-07
Publisher
Applied physics letters
Citation
VOL 97, NO 1, 013102-1-013102-3
Abstract
Control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to a variety of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures with engineered structural inversion asymmetry. Nanostructures produced in this manner may be useful in developing a variety of nanoelectronic, electro-optic, and spintronic devices.
URI
http://pubs.kist.re.kr/handle/201004/37662
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
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