Nanoscale rectification at the LaAlO3/SrTiO3 interface
- Nanoscale rectification at the LaAlO3/SrTiO3 interface
- Daniela F. Bogorin; Chung Wung Bark; 장호원; Cheng Cen; Chad M. Folkman; Chang-Beom Eom; Jeremy Levy
- LaAlO3/SrTiO3; Nanoscale rectification; Metal-insulator transition; Two-dimensional electron; Conducting AFM; 2E21722
- Issue Date
- Applied physics letters
- VOL 97, NO 1, 013102-1-013102-3
- Control over electron transport at scales that are comparable to the Fermi wavelength or mean-free
path can lead to a variety of electronic devices. Here we report electrical rectification in nanowires
formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and
SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification
in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures
with engineered structural inversion asymmetry. Nanostructures produced in this manner may be
useful in developing a variety of nanoelectronic, electro-optic, and spintronic devices.
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