Growth of Nano Structure Bi2Te3 Films using Modified MOCVD Technique

Title
Growth of Nano Structure Bi2Te3 Films using Modified MOCVD Technique
Authors
유현우정규호임주혁김광천박찬김진상
Keywords
MOCVD; Bi2Te3; Gas Pressure
Issue Date
2010-06
Publisher
전기전자재료학회논문지 (Journal of KIEEME)
Citation
VOL 23, NO 6, 497-501
Abstract
Nano structure Bi2Te3 films were deposited on (100) GaAs substrates using a modified MOCVD system and the effect of growth parameters on the structural properties were investigated. Different from conventional MOCVD systems, our reactor consist of pressure control unit and two heating zones ; one for formation of nano-sized particles and the other for the growth of nano particles on substrates. By using this instrument we successfully grow Bi2Te3 films with nano-grain size. The film grown at high reactor pressure has large grain size. On the contrast, the grain size decreases with a decrease in pressure of the reactor. Here, we introduce new growth methods of nano-grain structured Bi2Te3 films for high thermoelectric figure of merit.
URI
http://pubs.kist.re.kr/handle/201004/37693
ISSN
1226-7945
Appears in Collections:
KIST Publication > Article
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