Resistive switching characteristics of TiN/MnO2/Pt memory devices
- Resistive switching characteristics of TiN/MnO2/Pt memory devices
- 양민규; 박재완; 고태국; 이전국
- resistive switching; memory devices; MnO2; transition metal oxides; TiN electrode
- Issue Date
- Physica status solidi. Rapid Research Letters : PSS.
- VOL 4, NO 8-9, 233-235
- Bipolar resistive switching memory devices with a
TiN/MnO2/Pt structure were investigated in a low power operation
(250 μA/± 0.6 V). The devices showed good endurance
of 105 cycles at a 1 μs pulse and reliable data retention at both
RT and 125 °C. Moreover, the benefits of a high device yield
and potential multilevel storage make them promising devices
in next generation nonvolatile memory applications. The cell
area dependency suggests that the conducting mechanism in
the low resistance states is due to the formation of locally
conducting filaments. The results demonstrate the feasibility
of high performance resistive switching memory devices
based on transition metal oxides by using TiN as the top electrode.
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- KIST Publication > Article
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