Resistive switching characteristics of TiN/MnO2/Pt memory devices

Title
Resistive switching characteristics of TiN/MnO2/Pt memory devices
Authors
양민규박재완고태국이전국
Keywords
resistive switching; memory devices; MnO2; transition metal oxides; TiN electrode
Issue Date
2010-08
Publisher
Physica status solidi. Rapid Research Letters : PSS.
Citation
VOL 4, NO 8-9, 233-235
Abstract
Bipolar resistive switching memory devices with a TiN/MnO2/Pt structure were investigated in a low power operation (250 μA/± 0.6 V). The devices showed good endurance of 105 cycles at a 1 μs pulse and reliable data retention at both RT and 125 °C. Moreover, the benefits of a high device yield and potential multilevel storage make them promising devices in next generation nonvolatile memory applications. The cell area dependency suggests that the conducting mechanism in the low resistance states is due to the formation of locally conducting filaments. The results demonstrate the feasibility of high performance resistive switching memory devices based on transition metal oxides by using TiN as the top electrode.
URI
http://pubs.kist.re.kr/handle/201004/37714
ISSN
1862-6254
Appears in Collections:
KIST Publication > Article
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