Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration

Title
Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration
Authors
장성필동기영박정호오태연김종우이상렬주병권
Keywords
adhesion; carrier mobility; flexible electronics; gallium compounds; hydrophobicity
Issue Date
2010-06
Publisher
Applied physics letters
Citation
VOL 96, NO 24, 243504-1-243504-3
Abstract
We have investigated the parylene-groups for the device scaling-down as the protection layer of polyethersulfone PES substrate. In general, photolithography process on the PES substrate could not be allowed due to its poor chemical resistance. In this work, parylene-C is used as the protection layer. However, adhesion problem is observed caused by the hydrophobic property of parylene-groups. Thereby we additionally used SiO2 as the adhesion layer. Finally, we demonstrated the scaling-down of amorphous indium gallium zinc oxide thin film transistor on a plastic substrate by using lithography technique. Field-effect mobility, threshold voltage, current on-to-off ratio are measured to be 0.84 ㎠ /V s, 19.7 V, and 7.62X104, respectively.
URI
http://pubs.kist.re.kr/handle/201004/37721
ISSN
0003-6951
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KIST Publication > Article
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