Systematic investigation on the effect of contact resistance on the performance of a-IGZO thin-film transistors with various geometries of electrodes

Title
Systematic investigation on the effect of contact resistance on the performance of a-IGZO thin-film transistors with various geometries of electrodes
Authors
이재상장성필후씨네구상모이상렬
Keywords
a-IGZO TFT; channel width; contact resistance; magnetron sputtering; ZrO2
Issue Date
2010-04
Publisher
Physica status solidi. A, Applied research
Citation
VOL 207, NO 7, 1694-1697
Abstract
We demonstrate the influence of the contact resistance on the electrical properties of a-IGZO thin-film transistors (TFTs) with ZrO2 gate insulator grown by rf-magnetron sputtering at room temperature by adopting various channel widths and lengths. These TFTs have all been processed at room temperature with the same channel W/L ratio (W/L=5) but different channel widths (50, 150, 250, and 350 ㎛). As the channel width increases from 50 to 350 mm, the on-current and field effect mobility increase from 0.7 to 1mA and 19 to 31 ㎠/V s, respectively. However, the subthreshold swing decreases from 0.37 to 0.19 V/decade. These results show that the contact resistance strongly affects the device performances and should be considered in these applications.
URI
http://pubs.kist.re.kr/handle/201004/37722
ISSN
0031-8965
Appears in Collections:
KIST Publication > Article
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