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dc.contributor.author이재상-
dc.contributor.author장성필-
dc.contributor.author후씨네-
dc.contributor.author구상모-
dc.contributor.author이상렬-
dc.date.accessioned2015-12-02T15:29:26Z-
dc.date.available2015-12-02T15:29:26Z-
dc.date.issued201004-
dc.identifier.citationVOL 207, NO 7, 1694-1697-
dc.identifier.issn0031-8965-
dc.identifier.other32650-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/37722-
dc.description.abstractWe demonstrate the influence of the contact resistance on the electrical properties of a-IGZO thin-film transistors (TFTs) with ZrO2 gate insulator grown by rf-magnetron sputtering at room temperature by adopting various channel widths and lengths. These TFTs have all been processed at room temperature with the same channel W/L ratio (W/L=5) but different channel widths (50, 150, 250, and 350 ㎛). As the channel width increases from 50 to 350 mm, the on-current and field effect mobility increase from 0.7 to 1mA and 19 to 31 ㎠/V s, respectively. However, the subthreshold swing decreases from 0.37 to 0.19 V/decade. These results show that the contact resistance strongly affects the device performances and should be considered in these applications.-
dc.publisherPhysica status solidi. A, Applied research-
dc.subjecta-IGZO TFT-
dc.subjectchannel width-
dc.subjectcontact resistance-
dc.subjectmagnetron sputtering-
dc.subjectZrO2-
dc.titleSystematic investigation on the effect of contact resistance on the performance of a-IGZO thin-film transistors with various geometries of electrodes-
dc.typeArticle-
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