Study on the Electrical Properties of a-IGZO TFTs Depending on Processing Parameters

Title
Study on the Electrical Properties of a-IGZO TFTs Depending on Processing Parameters
Authors
정유진조경철김승한이상렬
Keywords
a-IGZO; Oxide semiconductor; Partial pressure; Transistor; Threshold voltage
Issue Date
2010-05
Publisher
전기전자재료학회논문지 (Journal of KIEEME)
Citation
VOL 23, NO 5, 349-352
Abstract
Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage(Vth) of a-IGZO TFTs. Interestingly, the Vth value of the oxide TFTs are slightly shifted in the positive direction due to increasing O2 partial pressure from 0.007 to 0.009 mTorr. The device performance is significantly affected by varying O2 ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.
URI
http://pubs.kist.re.kr/handle/201004/37723
ISSN
1226-7945
Appears in Collections:
KIST Publication > Article
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