Spin injection/detection using an organic-based magnetic semiconductor

Title
Spin injection/detection using an organic-based magnetic semiconductor
Authors
Jung-Woo YooChia-Yi Chen장호원C. W. BarkV. N. PrigodinC. B. EomA. J. Epstein
Keywords
Spin injector/detector; Spintronics; Molecule/organic-based; V(TCNE)x; Magnetoresistance; Magnetic tunnel junction.; 2E21722
Issue Date
2010-08
Publisher
Nature materials
Citation
VOL 9, 638-642
Abstract
The new paradigm of electronics, ‘spintronics’, promises to extend the functionality of information storage and processing in conventional electronics1. The principal spintronics device, the ‘spin valve’, consists of two magnetic layers decoupled by a spin-transporting spacer, which allows parallel (on) and antiparallel (off) alignment of the magnetizations (spins) of the two magnetic layers. The device resistance then depends on the spin alignment controlled by the external magnetic field. In pursuit of semiconductor spintronics2, there have been intensive efforts devoted to develop roomtemperature magnetic semiconductors3 and also to incorporate both inorganic semiconductors4 and carbon-based materials5–11 as the spin-transporting channels. Molecule/organic-based magnets, which allow chemical tuning of electronic and magnetic properties, are a promising new class of magnetic materials for future spintronic applications12,13. Here, we report the realization of an organic-based magnet as an electron spin polarizer in the standard spintronics device geometry. A thin non-magnetic organic semiconductor layer and an epitaxial ferromagnetic oxide film were employed to form a hybrid magnetic tunnel junction. The results demonstrate the spin-polarizing nature of the organic-based magnetic semiconductor, vanadium(TCNE: tetracyanoethylene)x (x ~ 2; Tc ~ 400 K), and its function as a spin injector/detector in hybrid magnetic multilayer devices.
URI
http://pubs.kist.re.kr/handle/201004/37748
ISSN
1476-1122
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