Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films
- Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films
- 윤주헌; 윤관희; 김종근; 김원목; 박종극; 이택성; 백영준; 성태연; 정증현
- CIGS solar cell; preferred orientation; MoSe2 reactivity; Mo density; Residual stress
- Issue Date
- 35th Photovoltaic Specialist Conference
- The effect of varying microstructures of Mo films on CIGS
preferred orientation has been studied by changing Mo
working pressure (in sputtering). CIGS I(220)/I(112) and
IGS I(300)/I(006) have strong dependencies of the
residual stress of Mo closely related to its microstructures:
they increases with Mo pressure and then gradually
decreases with Mo pressure, as the residual stress does.
The trend is exactly opposite to the known effect due to
Na. Thus this work shows that Mo microstructure itself
can determine IGS and CIGS textures without assistance
of other factors such as Na. XRD analysis on selenized
Mo and TEM work on IGS/Mo show that MoSe2 reactivity
itself influences the IGS texture more than its orientation.
In addition, MoSe2 reactivity depends on the in-grain
density of Mo which is linearly related to the residual
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