Study of Ion-Beam-Induced Damage and Luminescence Properties in Terbium-Implanted AlGaN
- Study of Ion-Beam-Induced Damage and Luminescence Properties in Terbium-Implanted AlGaN
- Ji-Ho Park; Akihiro Wakahara; Hiroshi Okada; Yuzo Furukawa; 김용태; Ho-Jung Chang; 송종한; 신상원; Jong-Han Lee; Shin-ichiro Sato; Takeshi Ohshima
- Ion-Beam-Induced Damage; Luminescence Properties; Terbium; AlGaN
- Issue Date
- Japanese journal of applied physics
- VOL 49, 032401-1-032401-5
- Terbium (Tb) ions were implanted into Al0:35Ga0:65N epitaxial layers at room temperature to investigate ion-beam-induced damage and
luminescence properties at various doses of 1 x 1012–2:8 x 1016 Tb/㎠. Rutherford backscattering spectrometry/channeling (RBS/channeling)
reveals that ion-beam-induced damage level steeply increases and that the damage cannot be fully suppressed even after rapid thermal
annealing at 1100 ℃, when the dose exceeds 5 x 1014 Tb/㎠. However, cathodoluminescence (CL) intensity related to Tb3+ transitions
increased initially and saturated above a dose of 1 x 1013 Tb/㎠. Furthermore, transient decay time determined by time-resolved
photoluminescence (TRPL) decreased faster and a fast decay component related to the formation of nonradiative Tb-defect complexes became
dominant, as Tb ion dose increases. Therefore, the results suggest that Tb-related luminescence properties are much susceptible to defects and
nonradiative defects, namely, Tb-defect complexes, are formed under low-dose conditions even at a very low structural defect density.
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