A design of Novel IGBT with Oblique Trench Gate

Title
A design of Novel IGBT with Oblique Trench Gate
Authors
오주현천대환이의복김영환김춘근주병권성만영김용태
Keywords
Trench IGBT; Breakdown voltage; Electric field distribution
Issue Date
2010-07
Publisher
2010 Asia-Pacific Workshop on fundamentals and Applications of Advanced Semiconductor Devices
Citation
VOL 110, NO 110, 57-59
Abstract
In this paper, a new IGBT structure that has oblique trench gate is proposed. This oblique trench gate IGBT(OTIGBT) has higher breakdown voltage and lower on-state voltage drop characteristic than conventional IGBT. The proposed OTIGBT distributes the electric field which is concentrateda t the trench edge to the curve of the p-base region. Moreover,t his proposed structwe can reduce the on-state voltage drop due to the reduced JFET area that is existed in the planar gate IGBT structure. Simulation results indicate the breakdown voltage of the OTIGBT is increased compared to the trench gate IGBT. The on-statev oltage drop is reducedt han planar gate IGBT which is similar to the on-state voltage drop of trench gate IGBT.
URI
http://pubs.kist.re.kr/handle/201004/37784
Appears in Collections:
KIST Publication > Conference Paper
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