Effects of Ag doping on the performance of ZnO-based thin film transistor

Title
Effects of Ag doping on the performance of ZnO-based thin film transistor
Authors
이득희이상렬김상식
Issue Date
2010-06
Publisher
CIMTEC 2010
Citation
, 91-91
Abstract
Owing to its unique optical and electrical properties, such as transparency and stability, ZnO is a promising oxide semiconductor utilized is multifunctional applications. In particular, the use of ZnO as an active layer in thin film transistors (TFTs) shows many advantages among them the high electron channel mobility leading to higher drive current and device operating speeds. The characteristics of ZnO thin films and then ZnO TFTs can be widely changed by various doping elements such as Al, Ga, N and Ag. Especially Ag doped ZnO thin films have been studied by many groups and it was demonstrated theoretically and experimentally that Ag could be have as acceptors. Furthermore Ag improves the stability of ZnO when it is located in interstitial sites and blocks the formation and migration of new Zn interstitials. However no report has been presented about Ag doped TFT. In this study, we fabricated Ag-doped ZnO thin film transistor (SZO TFT) using a bottomgate structure on thermally oxidized heavily doped p-Si (100). The SZO thin films were deposited via pulsed laser deposition (PLD) from a 3 wt % Ag-doped ZnO target using a KrF excimer laser (λ, 248 nm) at 300 °C. The SZO TFT (W/L=50 μm/150 μm) exhibited a μsat ― 3.48 ㎠/Vs, Ioff ―1.99×10-11A and Ion ― 1.85×10-6A.
URI
http://pubs.kist.re.kr/handle/201004/37816
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KIST Publication > Conference Paper
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