High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature

Title
High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature
Authors
이재상장성필구상모이상렬
Keywords
Amorphous indium gallium zinc oxide (a-IGZO); thin-film transistor (TFT); high ON current; ZrO2
Issue Date
2010-03
Publisher
IEEE Electron Device Letters
Citation
VOL 31, NO 3, 225-227
Abstract
We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO2 gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. ZrO2 is one of the most promising high-k materials. The a-IGZO TFT (channel W/L = 240/30 μm) with ZrO2 shows high performance such as high ON current of 2.11 mA and high field effect mobility of 28 ㎠/(V · s) at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches.
URI
http://pubs.kist.re.kr/handle/201004/37820
ISSN
0741-3106
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KIST Publication > Article
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