NO gas sensing properties of nanowire cluster gas sensors with Ga doped-ZnO
- NO gas sensing properties of nanowire cluster gas sensors with Ga doped-ZnO
- 박동훈; 김경원; 풀락; 이동윤; 이상렬
- Issue Date
- Changchun 2010
- , 79-79
- NO sensing property of various Ga doped ZnO nanowires (NWs) has been characterized. Various Ga doped ZnO NWs were grown using vapor-liquid-solid (VLS) method with Au catalyst on c-plane sapphire substrate by self-designed hot-walled pulsed laser deposition (HW-PLD) which is one of physical vapor deposition methods. The structural and electrical properties of Ga doped ZnO NWs have been systematically analyzed by controlled Ga concentration in ZnO NWs. Various Ga doped ZnO NWs had different density of stacking faults and different crystalline directions caused by increasing Ga concentration into ZnO NWs. From these results, the NO sensing response of ZnO NW as increasing Ga concentration in ZnO NWs is gradually changed. Different Ga concentration of ZnO NWs occur the various surface to volume ratio and current transfer between surface of ZnO NWs and NO. This control of structural and electrical properties of ZnO NWs by doping could provide improving sensitivity and the possibility of simultaneous detection of multi-component gases of various nanostructure gas sensor devices.
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