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dc.contributor.author정유진-
dc.contributor.author전윤수-
dc.contributor.author조경철-
dc.contributor.author김승한-
dc.contributor.author이상렬-
dc.date.accessioned2015-12-02T15:31:14Z-
dc.date.available2015-12-02T15:31:14Z-
dc.date.issued201008-
dc.identifier.citation, 164-164-
dc.identifier.other32770-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/37831-
dc.description.abstractAsymmetric staggered electrode (ASE) structure with Zn-based oxide channel layer has been implemented to improve the performance and the stability without passivation. Compared with both top-electrode and bottom-electrode structures, improvement has been observed since ASE-TFT was less affected by channel surface and interface interferences, which were main degradation factors in oxide TFTs, due to different current-path. The ASE-TFT showed device performance with sub-threshold swing (S.S) of 0.72 V, field-effect mobility (µFE) of 12.3 cm2 V−1 s−1, and on-to-off current ratio larger than 1x108. These improvements are mainly due to the formation of the current-path from edge of top-source to edge of bottom-drain which can avoid current scattering and charge trapping.-
dc.publisherChangchun 2010-
dc.titleAsymmetric staggered electrode for oxide thin film transistors-
dc.typeConference Paper-
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