Efficient suppression of the anomalous behaviors in a-IGZO TFT with HfO2 sandwiched by Al2O3 layers
- Efficient suppression of the anomalous behaviors in a-IGZO TFT with HfO2 sandwiched by Al2O3 layers
- 조경철; 정유진; 전윤수; 주병권; 이상렬
- Issue Date
- Changchun 2010
- , 165-165
- In summary, we have investigated and analyzed anomalous behaviors of a-IGZO TFTs with HfO2. In the case of a-IGZO TFT with HfO2, mobility, threshold voltage, subthreshold swing, on-to-off ratio and hysteresis width are measured to be about 115 cm2/Vs, 0 V, 0.80 V/decade, 6.71ⅹ104 and 1 V, respectively. This device shows abnormally high saturation mobility mainly due to Qinduced originated from gate-leakage current. On the other hand, a-IGZO TFTs with AHA gate-insulator showed stabilized characteristics in terms of mobility, threshold voltage, subthreshold swing, on-to-off ratio and hysteresis width of about 27.1 cm2/Vs, 0.2 V, 0.68 V/decade, 2.52ⅹ104 and 0.37 V, respectively. In the case of a-IGZO TFT with AHA gate-insulator, electrons cannot easily move across the gate-insulator due to Al2O3 barrier layer. It is expected that this elegant a-IGZO TFT using AHA gate-insulator with very narrow hysteresis characteristic will be a possible candidate for stable backplane TFT to replace amorphous-Si for future display applications.
- Appears in Collections:
- KIST Publication > Conference Paper
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.