Effects of electrode structures on the electrical properties of amorphous ZnO thin film transistor
- Effects of electrode structures on the electrical properties of amorphous ZnO thin film transistor
- 전윤수; 정유진; 조경철; 이상렬
- Issue Date
- Changchun 2010
- , 167-167
- We have investigated the effects of electrode structures to the performance and stability of a-IGZO TFTs that were deposited by rf-sputtering method. TFT characteristic measurements of top, bottom and dual electrode structures show similar results with Ion/off of 107, but that of ASE electrode structure shows Ion/off of 108. In the case of stability of the TFTs, bias temperature stress (BTS) test has been performed at 60 ℃. The a-IGZO TFTs with top and bottom electrode structure shows poorer stability with positive Vth shift of 4.3 V and negative Vth shift of 5.6 V, respectably, in 6 hrs BTS test. However, the a-IGZO TFTs with ASE electrode structure show less than 1 V shift of Vth. The better electrical properties and enhanced stability of the a-IGZO TFT with ASE electrode structure is due to the reduced electron trapping effect in the interface between the channel layer and substrate, which is came from the ASE electrode structure.
- Appears in Collections:
- KIST Publication > Conference Paper
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.