Observation of Microstructural Evolutions of Epitaxial Fe/MgO Layers Grown on InxGa1-xAs Substrates
- Observation of Microstructural Evolutions of Epitaxial Fe/MgO Layers Grown on InxGa1-xAs Substrates
- 김경호; 김형준; 안재평; 신일재; 장준연
- Issue Date
- IEEE NANO 2010 Joint Symposium with NANO KOREA
- The micostructural evolutions of epitaxial Fe/MgO layers on InxGa1-xAs substrates have been investigated with respect to indium content, x and the growth temperature of MgO interlayer. Keeping the in-plane epitaxial relationship of Fe//MgO[1-10]//InxGa1-xAs[1-10] in the structures of all x values, the crystal structure and morphology of the Fe/MgO layers considerably change with the x value and the MgO growth temperature. 4nm thick MgO layers grow in two-dimensional layer regardless of the x value and the growth temperature in spite of relatively large lattice mismatch to the substrates. In clear contrast, the morphology of subsequent Fe alters from two-dimensional layer to three-dimensional islands with the x value. The higher x values give rise to the larger misfit strain within MgO layers, leading to the Fe island formation. The higher MgO growth temperatures accelerate the partial strain relaxation of the MgO layers, resulting in the suppression of the Fe island formation.
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