Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal-Oxide-Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process

Title
Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal-Oxide-Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process
Authors
박재현송재영김종필김상완윤장근박병국
Issue Date
2010-08
Publisher
Japanese journal of applied physics
Citation
VOL 49, NO 8, 084203-1-084203-5
Abstract
The silicon nanowire gate-all-around (GAA) metal–oxide–semiconductor field effect transistors (MOSFETs) have been fabricated by using inverted sidewall spacers to scale the gate length. The patterning strategy of inverted sidewall spacers is based on the self-aligned local-channel V-shaped gate electrode (V-gate) by optical lithography (SALVO) process. Through this technique, we have obtained an aggressively scaled gate length down to 10nm regime. In addition, the silicon nanowire structure with diameter of about 10 nm has been successfully formed by reducing of the local channel. In the fabricated device, we have confirmed that it has excellent device characteristics in terms of the sub-threshold swing (SS), drain induced barrier lowering (DIBL), and low level of off-state leakage current in spite of the short-channel effect (SCE).
URI
http://pubs.kist.re.kr/handle/201004/37850
ISSN
0021-4922
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE