Low Voltage Operating InGaZnO4 Thin Film Transistors with Sputter-Deposited PMMA/High-k BST Stacked Gate Dielectric Layers
- Low Voltage Operating InGaZnO4 Thin Film Transistors with Sputter-Deposited PMMA/High-k BST Stacked Gate Dielectric Layers
- 김동훈; 조남규; 김호기; 김일두
- Issue Date
- Electrochemical and solid-state letters
- VOL 13, H370-H372
- This study reports the enhanced electrical properties of InGaZnO4 thin film transistors (TFTs) with sputter-deposited poly(methyl
methacrylate) (PMMA)/Ba0.6Sr0.4TiO3 (BST) stacked gate dielectrics. A noticeable reduction in the leakage current density
(~10−8 A/㎠ at 0.3 MV) was achieved by coating a PMMA overlayer. The InGaZnO4 TFTs utilizing the PMMA (30 nm)/BST
(270 nm) stacked gate dielectrics exhibited a high on/off current ratio of 2.6 X 106, a high field effect mobility of 10.2 ㎠ /V · s,
and a low threshold voltage of 1.1 V. Using stacked gate dielectric layers, we realized the low voltage operating InGaZnO4 TFTs
on a poly(ethylene terephthalate) substrate.
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