Hydrogen in polycrystalline ZnO thin films

Title
Hydrogen in polycrystalline ZnO thin films
Authors
김원목김용현김진수정증현백영준박종극이경석성태연
Keywords
polycrystalline ZnO thin film; hydrogen; transparent conducting oxide
Issue Date
2010-09
Publisher
Journal of physics D, applied physics
Citation
VOL 43, NO 36, 365406-1-365406-5
Abstract
The influence and the states of hydrogen in polycrystalline ZnO thin films were investigated by preparing films with different amounts of oxygen vacancies at various hydrogen potentials. The most notable effect of hydrogen addition was passivation of grain boundaries. The majority of hydrogen incorporation in polycrystalline ZnO films was attributed to hydrogen interstitials, and a substantially smaller number of multicentre bonds at oxygen vacancies were formed even at high hydrogen potentials. The major source of free carriers in polycrystalline ZnO films deposited without intentional hydrogen addition was oxygen vacancies with 2+ charge state with large atomic relaxation.
URI
http://pubs.kist.re.kr/handle/201004/37872
ISSN
0022-3727
Appears in Collections:
KIST Publication > Article
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