Spin-orbit interaction parameters in double-sided doped In0.53Ga0.47As quantum well structures

Title
Spin-orbit interaction parameters in double-sided doped In0.53Ga0.47As quantum well structures
Authors
김경호김형준구현철장준연김영근
Issue Date
2010-08
Publisher
IEEE NANO 2010
Abstract
The manipulation of spin-orbit interaction (SOI) parameter (α) by a gate electric field (Vg) in a semiconducting heterostructure is an important topic for spin-field effect transistor (spin- FET) applications. The SOI resulting from structural inversion asymmetry (SIA) causes the spin precession in a quantum well (QW) of the heterostrucrtue. Furthermore, the spin precession should be controlled by the Vg. Based on the fact that the variation of α with respect to Vg is significantly influenced by the conduction band potential gradient of the QW, we have demonstrated the variations of α in QW structures with different QW thicknesses. Figure 1 (a) shows the schematic of a double-sided doped In0.53Ga0.47As QW structure. The calculated conduction band diagram with respect to the QW thickness (x nm) is shown in Fig. 1 (b). In contrast to a monotonic potential gradient of a thin QW, the potential gradient of a relatively thick QW becomes symmetrically bent and has the opposite gradients at both ends. Figure 1 (c) illustrating the Vg dependent; α; obtained by Shubnikov-de Hass (SdH) oscillation, indicates the opposite sign of α between two different QW thicknesses. We believe that the opposite sign of α results from the inversion of potential gradients of the QWs. In this work, we further discuss the critical QW thicknesses for the opposite sign of α with respect to Vg at different SIA.
URI
http://pubs.kist.re.kr/handle/201004/37873
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