Spin-orbit interaction parameters in double-sided doped In0.53Ga0.47As quantum well structures
- Spin-orbit interaction parameters in double-sided doped In0.53Ga0.47As quantum well structures
- 김경호; 김형준; 구현철; 장준연; 김영근
- Issue Date
- IEEE NANO 2010
- The manipulation of spin-orbit interaction (SOI) parameter (α) by a gate electric field (Vg)
in a semiconducting heterostructure is an important topic for spin-field effect transistor (spin-
FET) applications. The SOI resulting from structural inversion asymmetry (SIA) causes the
spin precession in a quantum well (QW) of the heterostrucrtue. Furthermore, the spin
precession should be controlled by the Vg. Based on the fact that the variation of α with
respect to Vg is significantly influenced by the conduction band potential gradient of the QW,
we have demonstrated the variations of α in QW structures with different QW thicknesses.
Figure 1 (a) shows the schematic of a double-sided doped In0.53Ga0.47As QW structure. The
calculated conduction band diagram with respect to the QW thickness (x nm) is shown in Fig.
1 (b). In contrast to a monotonic potential gradient of a thin QW, the potential gradient of a
relatively thick QW becomes symmetrically bent and has the opposite gradients at both ends.
Figure 1 (c) illustrating the Vg dependent; α; obtained by Shubnikov-de Hass (SdH)
oscillation, indicates the opposite sign of α between two different QW thicknesses. We
believe that the opposite sign of α results from the inversion of potential gradients of the
QWs. In this work, we further discuss the critical QW thicknesses for the opposite sign of α
with respect to Vg at different SIA.
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