Fabrication and Characterization of Ga-Doped ZnO Nanowire FET for Gas Sensing

Fabrication and Characterization of Ga-Doped ZnO Nanowire FET for Gas Sensing
Issue Date
IEEE nano 2010
Ga-doped ZnO (GZO) nanowires (NWs) have attracted significant attention due to their notable ability to react with chemical and/or biomedical materials to give resistance modulation when they are employed as channel layer of electronic devices [1,2]. In this work, we demonstrate an efficient NO2 sensor using pure ZnO and GZO NW with FET structures. 1, 3 and 5 wt. % Ga-doped ZnO NWs are synthesized on sapphire substrate by hot-walled pulsed laser deposition (HW-PLD) with Au catalysts. X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) characterizations indicate that the obtained NWs have well-crystallized hexagonal structures with customized Ga-doping. The diameter and length of NWs are about 80 nm and 7 μm, respectively. The resistance change is checked with NO2 gas injection into the self-designed gas chamber that can facilitate the detection of the resistance change and the control of gas flow as well as temperature. The sensitivities are changed depending on pure ZnO and GZO NW FET sensors with different NO2 gas concentration ranging from 0.1 to 10 ppm at 200°C. Significant resistance modulation is observed and the results are compared in the cases of various materials including the pure ZnO and GZO NWs in terms of the sensitivity.
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
RIS (EndNote)
XLS (Excel)


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.