InGaZnO4-Based Thin Film Transistors Using Room-Temperature Grown Mg2Hf5O12 Gate Insulator
- InGaZnO4-Based Thin Film Transistors Using Room-Temperature Grown Mg2Hf5O12 Gate Insulator
- 김동훈; 서형탁; 정권범; 조남규; 김호기; 김일두
- Issue Date
- Journal of the Electrochemical Society
- VOL 157, NO 10, H964-H968
- This study reports the dielectric and leakage current properties of Mg2Hf5O12 thin films deposited at room temperature by radio-frequency magnetron sputtering. Polycrystalline Mg2Hf5O12 thin films showed a reasonably high dielectric constant (εr=22) and greatly enhanced leakage current characteristics (<2×10−7 A/㎠) compared to the leakage current (~2×10−5 A/㎠) of HfO2 thin films at 0.4 MV/cm. A bandedge spectroscopic analysis revealed lower conduction bandedge defect states and a greater p-type-like Fermi energy level of Mg2Hf5O12 compared to the HfO2 thin films. The suitability of Mg2Hf5O12 films as gate insulators for low voltage operating InGaZnO4 thin film transistors (TFTs) was investigated. All room-temperature processed InGaZnO4 TFTs on plastic substrates exhibited a high field effect mobility of 27.32 ㎠/Vs and a current on/off ratio of 4.01×106. The threshold voltage and subthreshold swing were 2 V and 440 mV/dec, respectively. The fabrication and compositional manipulation method of the Mg2Hf5O12 films described in this work is simple and versatile, providing fascinating opportunities for new high-k gate dielectrics.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.