Thickness dependence of terahertz emission in InAs and its application to transmissive source
- Thickness dependence of terahertz emission in InAs and its application to transmissive source
- 홍영빈; 정지훈; 송진동; 조영달
- Issue Date
- , P2-163
- Finally, we removed the GaAs substrate by lapping and wet etching
process from 0.9 μm-thick sample; layer; the thin InAs layer was then attached to
the sapphire substrate prior to being tested as a transmissive THz emitter. The
results of the THz spectra measured in either reflection (dotted) or transmission
geometry (solid) are displayed in Fig.(b). In spite of the refractive index
mismatch at the air-sapphire and the InAs sapphire interfaces having no anti-reflection coating, we observed a comparable THz radiation intensity along the transmission geometry (see inset figure for the experimental scheme).
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