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dc.contributor.author홍영빈-
dc.contributor.author정지훈-
dc.contributor.author송진동-
dc.contributor.author조영달-
dc.date.accessioned2015-12-02T15:32:19Z-
dc.date.available2015-12-02T15:32:19Z-
dc.date.issued201007-
dc.identifier.citation, P2-163-
dc.identifier.other32847-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/37901-
dc.description.abstractFinally, we removed the GaAs substrate by lapping and wet etching process from 0.9 μm-thick sample; layer; the thin InAs layer was then attached to the sapphire substrate prior to being tested as a transmissive THz emitter. The results of the THz spectra measured in either reflection (dotted) or transmission geometry (solid) are displayed in Fig.(b). In spite of the refractive index mismatch at the air-sapphire and the InAs sapphire interfaces having no anti-reflection coating, we observed a comparable THz radiation intensity along the transmission geometry (see inset figure for the experimental scheme).-
dc.publisherICPS2010-
dc.titleThickness dependence of terahertz emission in InAs and its application to transmissive source-
dc.typeConference Paper-
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