Photoluminescence Characterization of Vertically Coupled Low Density InGaAs Quantum Dots for Quantum Information Processing Devices

Title
Photoluminescence Characterization of Vertically Coupled Low Density InGaAs Quantum Dots for Quantum Information Processing Devices
Authors
하승규조남기임주영박성준송진동최원준한일기이정일
Keywords
InGaAs; quantum dot; photoluminescence; MBE; low density; quantum information; vertical coupling
Issue Date
2010-08
Publisher
IEEE NANO 2010
Abstract
The low density InGaAs/GaAs Quantum Dot (QD) samples have grown with migration enhanced molecular beam epitaxy (MEMBE) method as a candidate for quantum information processing devices. We have grown samples which have two layers of InGaAs QDs buried in GaAs barriers differing spacer layer (SL) thickness, and a sample with a single layer of QDs for comparison. As a preliminary characterization of these vertically coupled QD samples, low temperature pump power dependent photo-luminescence (PL) measurements were performed so that the effects of vertical coupling of InGaAs QDs according to SL thickness variation were observed and analyzed.
URI
http://pubs.kist.re.kr/handle/201004/37904
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE