Low density GaAs quantum dots grown by droplet epitaxy
- Low density GaAs quantum dots grown by droplet epitaxy
- 이은혜; 송진동; 김수연; 신상훈; 한일기; 이정일; 김종수; 장수경
- GaAs quantum dot; droplet epitaxy; low density
- Issue Date
- , P1-016
- Low density quantum dots (QDs) have a potential application in single photon source. In general, In(Ga)As QDs
made by Stranski-Krastanow (SK) growth mode have widely used and well-known. However, these QDs formation
has two drawbacks in the application of single photon source requiring the number of quantum dots less than 10 on
1 mm x 1mm. First of all, SK method, which is subtly depending on substrate temperature and growth rate, is not
effective to obtain uniform, reproducible low density QDs. Also, it is difficult to grow low density QDs on a large
area substrate. In addition, wavelength shorter than 0.8 μm is preferred for efficient and cost-effective silicon array
based systems to measure a single photon source. Meanwhile, the emission line of In(Ga)As QDs at a low
temperature is about 1 μm.
Thus, low density GaAs QDs were grown on Al30GaAs/GaAs substrate by using droplet epitaxy, which consists
of perfectly separated introduction of group III metals and group V, instead of simultaneous introduction (SK
method) . In this research, we changed growth parameters of substrate temperature, Ga flux ratio and Ga
coverage and showed the structural properties of Ga droplets such as size, density and distribution. Then, we could
finally get 3.4 Gallium droplets/μm2 and 4.7 GaAs droplets QDs/μm2 after introduction of arsenics. Additionally,
photoluminescence characteristics of this low density QDs will be presented.
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