Low density GaAs quantum dots grown by droplet epitaxy

Title
Low density GaAs quantum dots grown by droplet epitaxy
Authors
이은혜송진동김수연신상훈한일기이정일김종수장수경
Keywords
GaAs quantum dot; droplet epitaxy; low density
Issue Date
2010-07
Publisher
ICPS2010
Citation
, P1-016
Abstract
Low density quantum dots (QDs) have a potential application in single photon source. In general, In(Ga)As QDs made by Stranski-Krastanow (SK) growth mode have widely used and well-known. However, these QDs formation has two drawbacks in the application of single photon source requiring the number of quantum dots less than 10 on 1 mm x 1mm. First of all, SK method, which is subtly depending on substrate temperature and growth rate, is not effective to obtain uniform, reproducible low density QDs. Also, it is difficult to grow low density QDs on a large area substrate. In addition, wavelength shorter than 0.8 μm is preferred for efficient and cost-effective silicon array based systems to measure a single photon source. Meanwhile, the emission line of In(Ga)As QDs at a low temperature is about 1 μm. Thus, low density GaAs QDs were grown on Al30GaAs/GaAs substrate by using droplet epitaxy, which consists of perfectly separated introduction of group III metals and group V, instead of simultaneous introduction (SK method) [1]. In this research, we changed growth parameters of substrate temperature, Ga flux ratio and Ga coverage and showed the structural properties of Ga droplets such as size, density and distribution. Then, we could finally get 3.4 Gallium droplets/μm2 and 4.7 GaAs droplets QDs/μm2 after introduction of arsenics. Additionally, photoluminescence characteristics of this low density QDs will be presented.
URI
http://pubs.kist.re.kr/handle/201004/37907
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE