Fabrication of multi-stacked InAs/InGaAs dot-in-a-well structures by metal organic chemical vapour deposition for quantum dot infrared photodetector

Title
Fabrication of multi-stacked InAs/InGaAs dot-in-a-well structures by metal organic chemical vapour deposition for quantum dot infrared photodetector
Authors
김정섭하승규양창재이재열최원준윤의준
Keywords
InAs/InGaAs dot-in-a-well; MOCVD; quantum dot; infrared detector; photoluminescence; I-V characteristics
Issue Date
2010-07
Publisher
ICPS2010
Citation
, P1-389
Abstract
In this study, We grew multi-stacked InAs/In0.1Ga0.9As DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type top contact GaAs layer (TCL) is above 600 oC, the PL intensity severely decreased and dark current level increased. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and In0.1Ga0.9As well layer. Recent experimental results and discussion will be addressed.
URI
http://pubs.kist.re.kr/handle/201004/37909
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