Fabrication of multi-stacked InAs/InGaAs dot-in-a-well structures by metal organic chemical vapour deposition for quantum dot infrared photodetector
- Fabrication of multi-stacked InAs/InGaAs dot-in-a-well structures by metal organic chemical vapour deposition for quantum dot infrared photodetector
- 김정섭; 하승규; 양창재; 이재열; 최원준; 윤의준
- InAs/InGaAs dot-in-a-well; MOCVD; quantum dot; infrared detector; photoluminescence; I-V characteristics
- Issue Date
- , P1-389
- In this study, We grew multi-stacked InAs/In0.1Ga0.9As DWELL (dot-in-a-well) structure by metal organic
chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark
current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density
of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved
the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth
temperature of n-type top contact GaAs layer (TCL) is above 600 oC, the PL intensity severely decreased and dark
current level increased. This suggest that the thermal escape of bounded electrons and non-radiative transition
become dominant due to the thermal inter-diffusion at the interface between InAs QDs and In0.1Ga0.9As well layer.
Recent experimental results and discussion will be addressed.
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