Growth of InAs layer on GaAs with AlAs0.32Sb0.68 buffer and the effect of thickness of InAs on its physical properties

Title
Growth of InAs layer on GaAs with AlAs0.32Sb0.68 buffer and the effect of thickness of InAs on its physical properties
Authors
김수연송진동김태환
Keywords
MBE; AlAsSb buffer layer; InAs on GaAs substrate; structural property; electron mobility; spintronics; coherent THz generation
Issue Date
2010-07
Publisher
ICPS2010
Citation
, P1-300
Abstract
InAs has 0.3 eV band gap and 15,000 cm2/Vs of 300 K-electron mobility. Therefore, the 2 DEGs with InAs have been studied for the application to high-speed transistor of future or for the reach on noble physics such as SPINTRONICS [1,2]. Meanwhile, bulk InAs also has interesting features such as low band gap for longwavelength detectors etc. Especially, InAs has attracted attention because coherent THz generation is possible with it [3]. However, the large lattice constant of 0.606 nm results in the problem of lack of insulating substrate. Although GaSb wafer (0.610 nm, 0.72 eV) is available from industrial wafer supplier, GaSb is not a good insulator at room temperature and its quality is of question. Therefore, many researchers introduced AlSb or AlGaSb buffers on GaAs wafers to accommodate the lattice mismatches. [1,2] Although AlSb (0.614 nm) and AlGaSb have been successful buffers for thin InAs, these are not lattice-matched to InAs. Incorporation of As is necessary to reduce the lattice constant to accommodate the growth of thick InAs. We report the high-quality growth of InAs layer on GaAs with 2.2 um-thick AlAs0.32Sb0.68 buffer layers. The structural properties are studied by AFM image / RMS roughness, XRD rocking curves, TEM transmission images as a function of InAs thickness in the range of 0.01 ~ 1.7 um. The electrical properties are also covered. Finally, we find that the 1.7 um-thick InAs on a 2.2 um-thick AlAs0.32Sb0.68/GaAs shows ~10,000 cm2/Vs of 300 K-electron mobility and narrow FWHM of XRD rocking curves comparable with that of GaAs with low defect in the InAs.
URI
http://pubs.kist.re.kr/handle/201004/37911
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE