Growth of InAs layer on GaAs with AlAs0.32Sb0.68 buffer and the effect of thickness of InAs on its physical properties
- Growth of InAs layer on GaAs with AlAs0.32Sb0.68 buffer and the effect of thickness of InAs on its physical properties
- 김수연; 송진동; 김태환
- MBE; AlAsSb buffer layer; InAs on GaAs substrate; structural property; electron mobility; spintronics; coherent THz generation
- Issue Date
- , P1-300
- InAs has 0.3 eV band gap and 15,000 cm2/Vs of 300 K-electron mobility. Therefore, the 2 DEGs with InAs have
been studied for the application to high-speed transistor of future or for the reach on noble physics such as
SPINTRONICS [1,2]. Meanwhile, bulk InAs also has interesting features such as low band gap for longwavelength
detectors etc. Especially, InAs has attracted attention because coherent THz generation is possible with
it . However, the large lattice constant of 0.606 nm results in the problem of lack of insulating substrate.
Although GaSb wafer (0.610 nm, 0.72 eV) is available from industrial wafer supplier, GaSb is not a good insulator
at room temperature and its quality is of question. Therefore, many researchers introduced AlSb or AlGaSb buffers
on GaAs wafers to accommodate the lattice mismatches. [1,2] Although AlSb (0.614 nm) and AlGaSb have been
successful buffers for thin InAs, these are not lattice-matched to InAs. Incorporation of As is necessary to reduce
the lattice constant to accommodate the growth of thick InAs.
We report the high-quality growth of InAs layer on GaAs with 2.2 um-thick AlAs0.32Sb0.68 buffer layers. The
structural properties are studied by AFM image / RMS roughness, XRD rocking curves, TEM transmission images
as a function of InAs thickness in the range of 0.01 ~ 1.7 um. The electrical properties are also covered.
Finally, we find that the 1.7 um-thick InAs on a 2.2 um-thick AlAs0.32Sb0.68/GaAs shows ~10,000 cm2/Vs of 300
K-electron mobility and narrow FWHM of XRD rocking curves comparable with that of GaAs with low defect in
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