Theoretical and experimental studies of the effects of rapid thermal annealing in GaAs/AlGaAs quantum dots grown by droplet epitaxy
- Theoretical and experimental studies of the effects of rapid thermal annealing in GaAs/AlGaAs quantum dots grown by droplet epitaxy
- 문필경; 하승규; 송진동; 임주영; S. Bounouar; F. Donatini; L. S. Dang; J. P. Poizat; J. S. Kim; 최원준; 한일기; 이정일
- Issue Date
- , P1-127
- Droplet epitaxy (DE) is a novel growth method based on molecular beam epitaxy, which allows for the
fabrication of a large variety of nanostructures with different geometries, ranging from quantum dots (QDs),
quantum dot molecules, single ring, and concentric rings. Recently, we fabricated low-density GaAs/AlGaAs QDs
for single photon source by DE. Unlike Stranski-Krastanov (S-K) method, DE enables the formation of QDs even
with the materials with small lattice mismatch. In this research, we theoretically and experimentally investigate the
effects of rapid thermal annealing (RTA) on the optical properties and emission tunability of the GaAs/AlGaAs
QDs grown by DE. We calculated a diffusion length from the emission peak shift of underlying GaAs/AlGaAs
superlattice (SL), and investigated the effects of RTA on the optical properties of the QDs.
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