Formation of Nanoporous TiO2 Thin Films on Si by Anodic Oxidation
- Formation of Nanoporous TiO2 Thin Films on Si by Anodic Oxidation
- 윤여준; 김도홍; 장호원
- 나노다공성 TiO2; 양극산화; 나노튜브; TiO2; Anodic oxidation; Nanotube; Nanoporous
- Issue Date
- 전기전자재료학회논문지 (Journal of KIEEME)
- VOL 23, NO 8, 655-659
- Nanoporous titanium dioxide (TiO2) is very attractive material for various applications due to
the high surface to volume ratio. In this study, we have fabricated nanoporous TiO2 thin films on Si by
anodic oxidation. 500-nm-thick titanium (Ti) films were deposited on Si by using electron beam evaporation.
Nanoporous structures in the Ti films were obtained by anodic oxidization using ethylene glycol
electrolytes containing 0.3 wt% NH4F and 2 vol% H2O under an applied bias of 5 V. The diameter of
nanopores in the Ti films linearly increased with anodization time and the whole Ti layer could become
nanoporous after anodizing for 3 hours, resulting in vertically aligned nanotubes with the length of 200～
300 nm and the diameter of 50～80 nm. Upon annealing at 600℃ in air, the anodized Ti films were fully
crystallized to TiO2 of rutile and anatase phases. We believe that our method to fabricate nanoporous
TiO2 films on Si is promising for applications to thin-film gas sensors and thin-film photovoltaics.
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