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dc.contributor.author박동희-
dc.contributor.author양정도-
dc.contributor.author홍태우-
dc.contributor.author최지원-
dc.contributor.author최원국-
dc.date.accessioned2015-12-02T15:32:44Z-
dc.date.available2015-12-02T15:32:44Z-
dc.date.issued201010-
dc.identifier.citation, 32-35-
dc.identifier.issn0737-5921-
dc.identifier.other32877-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/37929-
dc.description.abstractThe feasibility of HIPIMS (High Power Impluse Magnetron Sputtering) application using oxide target for a transparent conducting oxide layer is discussed in terms of film resistance, transmittance, and morphology. In comparison to conventional RF sputtering process with the same working pressure, HIPIMS shows low sputtering speed but deposited AZO film has very smooth surface roughness about 1 nm and similar transmittance of 85% at 550 nm wavelength. When frequency is decreased from 240 Hz to 120Hz, sputtering speed is lowered by 50% but specific resistance is enhanced from 1×10-1 ohm·cm to 1.2×10-2 ohm·cm. In addition unbalanced magnetic field effect is also studied. With electromagnetic winding coil changing outside magnetic field, magnetic field to substrate is extended effectively and sputtered ions distribution is changed uniformly.-
dc.publisherSociety of Vacuum Coaters Technical Conference Proceedings-
dc.subjectHIPIMS-
dc.subjectUnbalanced magnetron-
dc.subjectAZO-
dc.titleCharacteristics of Al:doped ZnO Thin Films by HIPIMS (High Power Impulse Magnetron Sputtering) with Unbalanced Magnetron-
dc.typeConference Paper-
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KIST Publication > Conference Paper
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