Low voltage ZnO thin-film transistor with Ti-substituted BZN gate insulator for flexible electronics

Title
Low voltage ZnO thin-film transistor with Ti-substituted BZN gate insulator for flexible electronics
Authors
조광환강민규오승민강종윤이영백윤석진
Keywords
ZnO based thin-film transistor (TFTs); Ti-substituted Bi1.5ZnNb1.5O7; Gate insulator
Issue Date
2010-09
Publisher
Thin solid films
Citation
VOL 518, NO 22, 6277-6279
Abstract
We report the fabrication of ZnO based thin-film transistors (TFTs) with high-k gate insulator of Tisubstituted Bi1.5ZnNb1.5O7 (BZN) films. (Bi1.5Zn0.5)(Zn0.4Nb1.43Ti0.3O7) film deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition at room temperature exhibits high dielectric constant of 73 at 100 kHz, while BZN film shows much lower dielectric constant of 50, respectively. The increasing dielectric constant with increasing Ti substitution can be attributed to the presence of a highly polarizable TiO6 octahedra and its strong correlation with the NbO6 octahedra. All room temperature processed ZnO based TFTs using Ti-substituted BZN gate insulator exhibited filed effect mobility of 0.75 ㎠/Vs and low voltage device performance less than 2.5 V.
URI
http://pubs.kist.re.kr/handle/201004/37942
ISSN
0040-6090
Appears in Collections:
KIST Publication > Article
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