A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μm surface emitting laser diodes

Title
A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μm surface emitting laser diodes
Authors
조남기김광웅송진동최원준이정일
Keywords
distributed Bragg reflector; digital-alloy; Thin films; Epitaxy; Optical properties; Light absorption and reflection
Issue Date
2010-10
Publisher
Solid state communications
Citation
VOL 150, NO 39-40, 1955-1958
Abstract
A distributed Bragg reflector (DBR) utilizing the digital alloy Al0.9Ga0.1As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 μm optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a highly abrupt boundary of AlAs and GaAs, which supports the formation of a digital-alloy Al0.9Ga0.1As layer. The measurement showed that the digital-alloy AlGaAs/GaAs DBR had similar reflection spectra with enhanced uniform distribution over the whole substrate surface compared to the analog-alloy one. In the digital-alloy Al0.9Ga0.1As/GaAs DBR cavity, the reflection dip position was measured at around 1273 nm and the standard deviation of the distribution of the reflection dip was 1.31 nm in wavelength over 1/4 of a three-inch wafer.
URI
http://pubs.kist.re.kr/handle/201004/37956
ISSN
0038-1098
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KIST Publication > Article
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