Fully room-temperature-fabricated TiN/TaOx/Pt nonvolatile memory devices

Title
Fully room-temperature-fabricated TiN/TaOx/Pt nonvolatile memory devices
Authors
최선영양민규김상식이전국
Keywords
Room temperature process; TiN top electrode; resistive switching materials; non-volaitle memory; high processing rate; TaOx; transition metal oxides
Issue Date
2010-12
Publisher
Physica status solidi. Rapid Research Letters : PSS.
Citation
VOL 4, NO 12, 359-361
Abstract
The reliable resistive switching properties of TiN/TaOx/Pt structures fabricated with a fully room-temperature process are demonstrated in this letter. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to 105 cycles. No data loss was reported upon continuous readout for more than 104 s at 125 °C. Multilevel storage is feasible due to the dependence of the low resistance state (LRS) on the initial “SET” (switch from high to low RS) compliance current. The values of LRS showed no dependence on the size of the device, which correlated with the localized conductive filament mechanism. This nonvolatile multilevel memory effect and the fully room-temperature fabrication process make the TiN/TaOx/Pt memory devices promising for future nonvolatile memory application.
URI
http://pubs.kist.re.kr/handle/201004/38054
ISSN
1862-6254
Appears in Collections:
KIST Publication > Article
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