Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection

Title
Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection
Authors
전건록민병철이헌성신일재박창엽신성철
Issue Date
2010-07
Publisher
Applied physics letters
Citation
VOL 97, NO 2, 022105-1-022105-3
Abstract
We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the single crystalline CoFe(5.0 nm)/MgO/n-Ge(001) tunnel contacts with an ultrathin MgO thickness of 1.5, 2.0, and 2.5 nm have been investigated by the I-V-T and C-V measurements. Interestingly, the crystalline tunnel contact with the 2.0-nm MgO exhibits the Ohmic behavior with the RA products of 5.20X10−6 / 1.04X10−5 Ω m2 at ±0.25 V, satisfying the theoretical conditions required for significant spin injection and detection. We believe that the results are ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level.
URI
http://pubs.kist.re.kr/handle/201004/38066
ISSN
0003-6951
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KIST Publication > Article
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