The 8-inch free-standing CVD diamond wafer fabricated by DC-PACVD
- The 8-inch free-standing CVD diamond wafer fabricated by DC-PACVD
- 채기웅; 백영준; 박종극; 이욱성
- Diamond thick film; DC-PACVD; Free-standing diamond wafer; Large-area
- Issue Date
- Diamond and related materials
- VOL 19, NO 10, 1168-1171
- We report the fabrication of the 8-inch free-standing CVD diamond wafers by DC-PACVD process with the
diode-type electrode configuration. Methane–hydrogen gas mixture was used as the precursor gas. The
methane volume % in hydrogen, the gas flow rate and the chamber pressure were 5~12%, 400 sccm and
100~130 Torr, respectively. The discharge voltage and the discharge current were 840~910 V and 90~110 A,
respectively. The substrate temperature was 1200~1300 °C. The thermal conductivity, crystallinity and
microstructure were characterized by the converging thermal wave technique, Raman spectroscopy, optical
microscopy and SEM, respectively. The maximum growth rate was 9 μm/h for thermal grade 8-inch wafer.
The deviation of thickness and the thermal conductivity over the 8-inch wafer was around 10% of the
respective averaged values. The distribution of FWHM of Raman diamond peak over the wafer surface also
showed excellent uniformity. The extremely simple scale-up of the present deposition technology was
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