The 8-inch free-standing CVD diamond wafer fabricated by DC-PACVD

Title
The 8-inch free-standing CVD diamond wafer fabricated by DC-PACVD
Authors
채기웅백영준박종극이욱성
Keywords
Diamond thick film; DC-PACVD; Free-standing diamond wafer; Large-area
Issue Date
2010-10
Publisher
Diamond and related materials
Citation
VOL 19, NO 10, 1168-1171
Abstract
We report the fabrication of the 8-inch free-standing CVD diamond wafers by DC-PACVD process with the diode-type electrode configuration. Methane–hydrogen gas mixture was used as the precursor gas. The methane volume % in hydrogen, the gas flow rate and the chamber pressure were 5~12%, 400 sccm and 100~130 Torr, respectively. The discharge voltage and the discharge current were 840~910 V and 90~110 A, respectively. The substrate temperature was 1200~1300 °C. The thermal conductivity, crystallinity and microstructure were characterized by the converging thermal wave technique, Raman spectroscopy, optical microscopy and SEM, respectively. The maximum growth rate was 9 μm/h for thermal grade 8-inch wafer. The deviation of thickness and the thermal conductivity over the 8-inch wafer was around 10% of the respective averaged values. The distribution of FWHM of Raman diamond peak over the wafer surface also showed excellent uniformity. The extremely simple scale-up of the present deposition technology was demonstrated.
URI
http://pubs.kist.re.kr/handle/201004/38073
ISSN
0925-9635
Appears in Collections:
KIST Publication > Article
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