Nanocrystalline diamond gate FET for on-state current improvement

Title
Nanocrystalline diamond gate FET for on-state current improvement
Authors
김창훈이욱성최양규
Keywords
diamond gate; high-performance field effect transistor; nanocrystalline diamond; strain effect; stress effect
Issue Date
2010-10
Publisher
IEEE Electron Device Letters
Citation
VOL 31, NO 10, 1152-1154
Abstract
A nanocrystalline diamond gate field-effect transistor (FET) is demonstrated for the improvement of ON-state current with a CMOS-compatible process. A nanocrystalline diamond film was deposited on a Si3N4/SiO2 gate dielectric as a gate material. The diamond thin film served as a gate electrode; hence, an n-channel FET was successfully demonstrated. As a control group, a polysilicon gate FET with the same structure was also fabricated. Compared to the polysilicon gate FET, the diamond gate FET showed doubled ON-state current, which was primarily attributed to the strain effect of the diamond gate acting on the channel.
URI
http://pubs.kist.re.kr/handle/201004/38074
ISSN
0741-3106
Appears in Collections:
KIST Publication > Article
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