Calculation of full digital-alloyed 1.3 μm MQWs and their optical, structural and electrical properties
- Calculation of full digital-alloyed 1.3 μm MQWs and their optical, structural and electrical properties
- K H LEE; 송진동; 이정훈; 허두창; 한일기; Y T LEE
- Issue Date
- NANO KOREA
- Digital-alloys, or short-period superlattices (SPSs), consisting of binary or ternary layers
with periods of a few monolayers (MLs) have attracted attentions as a solution for molecularbeam
epitaxy (MBE) growth of ternary or quaternary materials of various composition with
enhanced band-offset, and without additional source cells and laborious change of cell
temperature during growth interruption. With the InGaAlAs digital-alloy MBE growth
technique, lattice-matched 1.58 μm multi-quantum well (MQW) laser diodes, broadbandemission
(1.3 - 1.9 μm) triple-QW light-emitting diodes, strained 1.3 μm MQW lasers,
strained 1.55 μm MQW lasers, 1.55 μm vertical cavity surface emitting lasers, avalanche
photodiodes, and fully digital-alloyed 1.3 μm MQWs have been successfully grown.[1,2]
In this presentation, optical properties of full digital-alloyed 1.3 μm MQWs will be
covered and electrical properties of full digital-alloyed MQW laser diodes will be shown.
Finally, the measured data will be compared with band-gap calculation.
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