Modified Potential Well formed by Si/SiO2/TiN/TiO2/SiO2/TaN for flash memory application

Title
Modified Potential Well formed by Si/SiO2/TiN/TiO2/SiO2/TaN for flash memory application
Authors
장강라창호Hua-Min LiTian-zi Shen정병기유원종
Keywords
flash memory; modified engineered-potential-well (MW); TiO2 trapping layer
Issue Date
2010-10
Publisher
IEEE transactions on electron devices
Citation
VOL 57, NO 11, 2794-2800
Abstract
This paper proposes a modified engineered-potentialwell (MW) for NAND flash memory application. The MW was formed by using a transitional SiO2/SiOxNy-TiOxNy tunnel barrier, a trap-rich TiO2 trapping layer, and an abrupt SiO2 block barrier. The transitional tunnel barrier shrinks to enhance the tunneling of carriers during programming/erasing (P/E) and extends to suppress charge loss during data retention. Deep-level transient spectroscopy suggests that this tunnel barrier has few shallow traps after a N2 + O2 thermal treatment, and the TiO2 trapping layer has deep electron traps. With the variable tunnel barrier and deep electron traps, theMWdevice showed promising performance in fast programming (< μs) at low-voltage operation (7&#8211;10 MV/cm), good P/E endurance (> 106 P/E cycles), large threshold voltage window (ΔVth =~6 V), as well as improved data retention at 125 &#9702;C.
URI
http://pubs.kist.re.kr/handle/201004/38249
ISSN
0018-9383
Appears in Collections:
KIST Publication > Article
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