Characterization of Cu(InGa)Se2 (CIGS) thin films in solar cell devices by secondary ion mass spectrometry
- Characterization of Cu(InGa)Se2 (CIGS) thin films in solar cell devices by secondary ion mass spectrometry
- 임원철; 이지혜; 이연희
- CIGS; solar; quantitative; depth profile; dynamic SIMS
- Issue Date
- 5th International Symposium on Practical Surface Analysis
- , 203-203
- In these days, interesting novel applications in photovoltaics are focused on thin and flexible solar modules, especially in the fields of space, aeronautics, and mobile applications. Actually, within the past years, researchers have been studied the development of flexible and lightweight CIGS modules, the growth of CIGS in the presence of Na, and the role of Mo as a medium for Na transport, etc.[1-3]
As the importance of CIGS module becomes increased, the quantification and the determination of CIGS module have been investigated by many research groups. Secondary Ion Mass Spectrometry (SIMS) was used for quantitative determination of CIGS module, that was complemented by X-ray Photoelectron Spectrometry (XPS) and Auger Electron Spectroscopy (AES). There are many experimental conditions and factors to affect the SIMS depth profiling, such as primary ion, beam energy, beam current, raster size, surface roughness, position in the sample stage, and homogeneity of chemical composition, etc.
Information from the different instrumental conditions on SIMS was required to gain an accurate view of the composition and the depth profile of CIGS module. We would like to discuss about these problems in the presentation.
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